Study on the Key Performance of TMR Magnetoresistive Sensing Unit Modulated by Exchange Bias of the Free Layer

Optimizing sample structural parameters, magnetic field annealing, series-parallel bridge design, current thermal effect, and additional bias are common methods used for controlling the tunneling magnetoresistance (TMR) sensing performance. By employing these methods, key performance parameters of TMR sensors such as sensitivity, noise resistance index, linearity, linear range can be optimized improved. Changing pinning layer, free barrier layer materials thickness unit, change exchange thus enhance parameters. In this study, through micromagnetic simulation experimental measurements, it is discovered that by modifying coupling in CoFeB/Ru/NiFe/IrMn, magnitude modulated, leading to improved unit. As IrMn effect gradually enhanced, unit increases, but sensitivity decreases. It further found linearity sensor optimal within a ±0.5 times moment variation (primarily CoFeB layer). Through our work, (caused layer) on verified Our work demonstrates more possibilities designing optimizing sensors, enriching dimensions modulation.